Journal
1. Boram Yi, Junghyeon Hwang, Tae Woo Oh, Sanghun Jeon, Jeong-Ook Jung, Ji-Woon Yang, "Design consideration of ferroelectric field-effect-transistors with metal–ferroelectric–metal capacitor for ternary content addressable memory," Solid-State Electronics, Vol. 206, 108674, Aug. 2023
2. Boram Yi, Geun Soo Yang, Sylvain Barraud, Laurent Bervard, Jae Woo Lee, and Ji-Woon Yang, “Bias Dependent Physics-Based Model of Low-Frequency Noise for Nanowire Type Gate-All-Around MOSFETs,” Solid-State Electronics, Mar. 2022
3. Yeong-Hun Park, Boram Yi, Seung-Hwan Kim, Ju-Hyun Shim, Hyeong-Sub Song, Hyun-Dong Song, Hyun-Jin Shin, Hi-Deok Lee, and Ji-Woon Yang, “Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors,” IEEE Trans. on Electron Devices, Vol. 68, No. 8, pp.4051~4056, Aug. 2021
4. Geunsoo Yang, Donghyun Kim, Ji-Woon Yang, Sylvain Barraud, Laurent Brevard, Gerard Ghibaudo and Jae Woo Lee, "Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET," Nanotechnology, Vol. 31, No. 41, pp.415201, July 2020.
5. Hyun-Dong Song, Hyeong-Sub Song, Sunil Babu Eadi, Hyun-Woong Choi, Hyun-Jin Shin, Jae Woo Lee, Ji-Woon Yang, and Hi-Deok Lee, "Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor", Japanese Journal of Applied Physics, Vol.59, SMMB03, May 2020.
6. Boram Yi, Yeong-Hun Park, and Ji-Woon Yang, “Physics-based Compact Model of Transient Leakage Current caused by Parasitic Bipolar Junction Transistor in Gate-All-Around MOSFETs,” Solid-State Electronics, Vol. 164, 107739, Feb. 2020.
7. Jun Hyeok Kim, Chan Ho Park, Sung Moo Kim, and Ji-Woon Yang, “Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4,” Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp.6732~6735, Oct. 2019.
8. Boram Yi, Jin-Hwan Oh, Ji-Seon Kim, Junhyeok Kim, and Ji-Woon Yang, “Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs,” IEEE Trans. on Nuclear Science, Vol. 65, No. 3, pp.866~870, Mar. 2018.
9. Boung Jun Lee, Byung Jun Lee, Jongchan Lee, Ji-Woon Yang, and Kwang-Ho Kwon, “Effects of Plasma Treatment on the Electrical Reliability of Multilayer MoS2 Field-Effect Transistors,” Thin Solid Films, Vol. 637, pp.32~36, Sep. 2017.
10. Mohendra Roy, Dongmin Seo, Sangwoo Oh, Ji-Woon Yang, and Sungkyu Seo, “A Review of Recent Progress in Lens-Free Imaging and Sensing,” Biosensors and Bioelectronics, vol.88, pp.130-143, Feb. 2017.
11. Byung Jun Lee, Boung Jun Lee, Alexander Efremov, Ji-Woon Yang, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/Ar Inductively Coupled Plasma,” Journal of Nanoscience and Nanotechnology, Vol. 16, No.11, pp.11201~11209, Nov. 2016.
12. Boram Yi, Chang Yong Lee, Jin-Hwan Oh, Boung Jun Lee, Sungkyu Seo, and Ji-Woon Yang,
“Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits,”IEEE Trans. on Electron Devices, Vol. 63, No. 10, pp.3864~3868, Oct. 2016.
13. Won Seok Choi, In Taek Choi, Ban Seok You, Ji-Woon Yang, Myung Jong Ju, and Hwan Kyu Kim, “Dye-Sensitized Tandem Solar Cells with Extremely High Open-Circuit Voltage Using Co(II)/Co(III) Electrolyte,”Israel Journal of Chemistry, Vol. 55, Issue 9, pp.1002~1010, Sep. 2015.
14. Byeong-Woon Hwang, Ji-Woon Yang, and Seok-Hee Lee, “Explicit Analytical Current-Voltage Model for Double-Gate Junctionless Transistor,” IEEE Transactions on Electron Devices, vol.62, NO.1, pp.171-177, Jan. 2015.
15. In Taek Choi, Ban Seok You, Yu Kyung Eom, Myung Jong Ju, Won Seok Choi, Sung Ho Kang, Min Soo Kang, Kang Deuk Seo, Ji Yeoun Hong, Sang Hyun Song, Ji-Woon Yang, and Hwan Kyu Kim, “Triarylamine-based Dual-Function Coadsorbents with Extended Pi-Conjugation Aryl Linkers for Organic Dye-Sensitized Solar Cells,” Organic Electronics, pp.3316-3326, Nov. 2014.
16. Jungsik Nam, Chang Yong Kang, Kwang Pyo Kim, Hyeopgoo Yeo, Boung Jun Lee, Sungkyu Seo, and Ji-Woon Yang, “Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs,” IEEE Transactions on Nuclear Science, vol.59, NO.6, pp.3021-3026, Dec. 2012.
17. Geonsoo Jin, In-Hwa Yoo, Seung Pil Pack, Ji-Woon Yang, Un-Hwan Ha, Se-Hwan Paek, and Sungkyu Seo, “Lens-free shadow image based high-throughput continuous cell monitoring technique,” Biosensors and Bioelectronics, vol.38, pp.126-131, Oct. 2012.
18. Yeon Hwa Kwak, Dong Soo Choi, Ye Na Kim, Hyeongkeun Kim, Dae Ho Yoon, Sang-Sik Ahn, Ji-Woon Yang, Woo Seok Yang, and Sungkyu Seo, “Flexible glucose sensor using CVD-grown graphene-based field effect transistor,” Biosensors and Bioelectronics, vol.37, pp.82-87, Aug. 2012.
19. Dong-Sik Kim, Jae-Hoon Choi, Myung-Hyun Nam, Ji-Woon Yang, James Jungho Pak, and Sungkyu Seo, “LED and CMOS image sensor based hemoglobin concentration measurement technique,” Sensors and Actuators B: Chemical, vol.157, pp.103-109, Sep. 2011.
20. Ji-Woon Yang, Chang Yong Kang, Casey Smith, Hemant Adhikari , Jeff Huang, Dawei Heh, Prashant Majhi, and Raj Jammy, “Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors,” Japanese Journal of Applied Physics, vol.48, Issue 4, pp.04C056, Apr. 2009.
21. Zhichao Lu, Jerry G. Fossum, Ji-Woon Yang, H. R. Harris, Vishal P. Trivedi, Min Chu, and Scott E. Thompson, “ A Simplified Superior Floating-Body/Gate DRAM Cell,” IEEE Electron Device Letters, Vol. 30, No. 3, pp. 282-284, Mar. 2009.
22. J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, and R. Jammy, “ New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs,” IEEE Electron Device Letters, Vol. 30, No. 1, pp. 54-56, Jan. 2009.
23. Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, and Hsing-Huang Tseng, “Hot carrier degradation in HfSiON/TiN fin-shaped field effect transistor with different substrate orientations,”Journal of Vacuum Science & Technology B, Vol. 27, No. 1, pp. 468-471, Jan. 2009.
24. Chang Yong Kang, Ji-Woon Yang, Jungwoo Oh, Rino Choi, Young Jun Suh, H.C. Floresca, Jiyoung Kim, Moon Kim, Byoung Hun Lee, Hsing-Huang Tseng, and Raj Jammy, “Effects of Film Stress Modulation using TiN Metal Gate on Stress Engineering and its Impact on Device Characteristics in Metal Gate/High-k Dielectric SOI FinFETs”, IEEE Electron Device Letters, Vol. 29, No. 5, pp. 487-489, May 2008.
25. Byoung Hun Lee, Chang Yong Kang, Paul Kirsch, Dawei Heh, Chadwin D. Young, Hongbae Park, Ji-Woon Yang, Gennadi Bersuker, Siddarth Krishnan, Rino Choi, and Hi-Deok Lee, "Electric field-driven dielectric breakdown of Metal-Insulator-Metal Hafnium-silicate," Applied Physics Letters, vol.91, Issue 24, pp.243514, Dec. 2007.
26. Jungwoo Oh, Prashant Majhi, Hideok Lee, Oooksang Yoo, Sanjay Benerjee, Chang Yong Kang, Ji-Woon Yang, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy, “Improved electrical characteristics of Ge-on-Si field effect transistors with controlled Ge epitaxial layer thickness on Si substrates,” IEEE Electron Device Lett., vol.28, No.11, pp.1044-1046, Nov. 2007.
27. H. Rusty Harris, Muhammad Mustafa Hussain, Casey Smith, Ji-Woon Yang, Prashant Majhi, Hemant Adhikari, Hsing-Huang Tseng, and Raj Jammy, “FinFETs: Challenges in Material and Processing for a New 3D Device Paradigm,” Future Fab International, Issue 23, pp.74-77, July 2007.
28. Ji-Woon Yang, Peter Zeitzoff, and Hsing-Huang Tseng, “Highly Manufacturable Double-Gate FinFET with Gate-Source/Drain Underlap,” IEEE Transactions on Electron Devices, vol.54, NO.6, pp.1464-1470, June 2007.
29. Jungwoo Oh, Prashant Majhi, Chang Yong Kang, Ji-Woon Yang, Hsing-Huang Tseng, and Raj Jammy,"Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers," Applied Physics Letters, vol.90, Issue 20, pp.202102, May 2007.
30. Seung-Hwan Kim, Jerry G. Fossum, and Ji-Woon Yang, "Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices with Gate-Source/Drain Underlap," IEEE Transactions on Electron Devices, vol.53, NO.9, pp.2143-2150, Sep. 2006.
31. Ji-Woon Yang and Jerry G. Fossum, "On the Feasibility of Nanoscale Triple-Gate CMOS Transistors," IEEE Transactions on Electron Devices, vol.52, NO.6, pp. 1159-1164, June 2005.
32. Ji-Woon Yang, Jerry G. Fossum, Glenn O. Workman, and Cheng-Liang Huang, "A Physical Model for Gate-to-Body Tunneling Current and Its Effects on Floating-Body PD/SOI CMOS Devices and Circuits,"Solid-State Electron., vol.48, pp.259-270, Feb. 2004.
33. Jerry G. Fossum, Ji-Woon Yang, and Vishal P. Trivedi, "Suppression of Corner Effects in Triple-Gate MOSFET's," IEEE Electron Device Lett., vol.24, pp. 745-747, Dec. 2003.
34. Jong-Wook Lee, Hyung-Ki Kim, Ji-Woon Yang, Won-Chang Lee, Jeong-Hee Oh, Min-Rok Oh, and Yo-Hwan Koh, "Comparison of Hole Mobility in LOCOS-Isolated Thin Film SOI p-Channel MOSFET's Fabricated on Various SOI Substrates," IEEE Electron Device Lett., vol.20, pp. 176-178, Apr. 1999.
35. Yo-Hwan Koh, Min-Rok Oh, Jong-Wook Lee, Ji-Woon Yang, Won-Chang Lee, and Hyung-Ki Kim,"Body-Contacted SOI MOSFET Structure and Its Application To DRAM," IEEE Transaction on Electron Devices, vol.45, NO.5, pp. 1063-1070, May 1998.
36. Jong-Wook Lee, Myung-Hee Nam, Jeong-Hee Oh, Ji-Woon Yang, Won-Chang Lee, Hyung-Ki Kim, Min-Rok Oh, and Yo-Hwan Koh, "Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide semiconductor field-effect transistor," Applied Physics Letters, vol.72, No.6, pp. 677-679, Feb. 1998.
37. Yo-Hwan Koh, Jin-Hyeok Choi, Myung-Hee Nam, and Ji-Woon Yang, "Body-Contacted SOI MOSFET Structure with Fully Bulk CMOS Compatible Layout and Process," IEEE Electron Device Lett., vol.18, pp. 102-104, Mar. 1997.